MoOx-Si heterojunction with wide-band-gap MoOx contact layer in the application of low-intensity visible-light sensing

Abstract The MoOx-Si heterojunction was demonstrated with MoOx as hole contact layer for visible-light sensor application. The α-MoO3 polycrystalline layer was fabricated with high band gap (~2.91 eV) and high transmittance (>75%). The microscale MoOx-Si heterojunction sensor displays great photocurrent under white-light illumination (~10−11 A at extremely low luminance of 40 lx). The rejection ratio is 103 at 1240 lx. Additionally, the MoOx-Si heterojunction sensor shows great repeatability and stability at remarkable low operation voltage (−0.5 V–0 V). The device displays fast recovery with short response time and decay time (both