High performance InAlN/GaN heterostructure and field effect transistor on sapphire substrate by MOCVD
2012
High-performance InAlN/GaN heterostructure by metal-organic chemical vapor deposition and field effect transistor with a nominal gate length of 0.2 μm on sapphire substrate were obtained. Low defects density and a high electron mobility of 1930 cm 2 /V·s were obtained for the heterostructure. The fabricated device exhibited remarkable RF characteristics, i.e. a cutoff frequency of 69GHz with the gate length of 0.2μm, suggesting the extraordinary performances reachable by InAlN based technology.
Keywords:
- Correction
- Source
- Cite
- Save
- Machine Reading By IdeaReader
12
References
0
Citations
NaN
KQI