Acoustic Charge Transport In Lateral n‐i‐p InSb/AlxIn1−xSb Quantum Well Diodes

Light emitting diodes have been fabricated in InSb/AlxIn1−xSb quantum wells using a simple bevel etching technique. Charge has been transported across the diodes at zero bias, proving that bevel etching can be used to fabricate lateral n‐i‐p diodes suitable for use as the basis of a surface acoustic wave driven single photon source.