InGaP/GaAs dual-junction solar cell with AlGaAs/GaAs tunnel diode grown on 10° off misoriented GaAs substrate

þþ -AlGaAs/N þþ -GaAs TDs grown on 10 � off GaAs substrates not only show a higher external quantum efficiency (EQE) but also generate a higher peak current density (Jpeak) at higher concentration ratios (185� ) than the solar cells with P þþ -GaAs/ N þþ -InGaP TDs grown on 6 � off GaAs substrates. Furthermore, the cell design with P þþ -AlGaAs/N þþ -GaAs TDs grown on 10 � off GaAs substrates