A compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport

This paper reports a compact velocity-overshoot model for deep-submicron bipolar devices considering energy transport based on a qualitative analysis. As verified by two-dimensional (2-D) simulation results, the analytical velocity-overshoot model predicts that in a bipolar device with a very short base width, its peak electron velocity, which can exceed the saturated velocity, occurs at a location ahead of its peak electron temperature location.