Comprehensive study of the effects of irradiation on charge collection efficiency in silicon detectors

Abstract The Charge Collection Efficiency (CCE) for heavily irradiated silicon devices has been carefully investigated on a series of microstrip detectors. Large-area sensors designed for the CMS silicon tracker have been irradiated with neutrons and protons up to a very high fluence. Effects on CCE have been studied using a beam of minimum ionizing particles and a fast shaping time electronics similar to what is expected in CMS. The paper shows the performance of the sensors for CCE and Signal-to-Noise ratio ( S / N ) under different operating conditions.