Old Web
English
Sign In
Acemap
>
Paper
>
A Study of Gate Current and Reliability in Ultra-Thin Gate Oxide MOSFET's
A Study of Gate Current and Reliability in Ultra-Thin Gate Oxide MOSFET's
1985
Akira Toriumi
M. Yoshimi
K. Taniguchi
Keywords:
Impact ionization
Electronic engineering
Engineering
Gate oxide
MOSFET
Hot-carrier injection
Voltage
Analytical chemistry
Fabrication
gate current
Kinetic energy
thin gate oxide
Correction
Source
Cite
Save
Machine Reading By IdeaReader
0
References
0
Citations
NaN
KQI
[]