A metal shield is designed to fill the air gap

The present invention relates to a semiconductor substrate configured to heat the wafer or physical vapor deposition system. In some embodiments, the disclosed physical vapor deposition system comprising at least one heat source, a heat source having one or more heating lamp module substrate. Light shielding means can be separated and the substrate module. In some embodiments, the shielding device comprising means integral or remote device. Physical vapor deposition system disclosed in the semiconductor substrate may be heated, without a separate compartment for the metal film deposited over the semiconductor substrate at reflux, thus reducing the processing time, less thermal budget and reduce damage to the substrate. The present invention further provides a design for a metal shield gap filling.