Validation of repair process for DUV attenuated phase-shift mask

The defect control of the attenuated-PSM is compared with that of the conventional binary intensity mask (BIM), because the fabrication process for the att-PSM tends to generate more defects than that of the BIM. To repair a defective att. PSM, a similar method used for BIM has been applied. However, this process may cause degradation of pattern fidelity with the repair pattern on the mask are transferred on the wafer, if the transmission and phase of repaired area are not well controlled. In this paper, we have investigated the effect of repairing process on the pattern fidelity to define contact holes using a KrF lithography with an att. PSM. The defects in the various distances form contact hole patterns and of various sizes were repaired. The experimental printability and simulation data from an aerial image model were compared for repaired defects. And the repair tool reliability and the simulation accuracy of the att. PSM was examined using CD-SEM. From the experimental results, repaired defects having larger size than the threshold. One or within a certain range from the pattern induced the pattern deformation. Therefore, the size of defect and the distance between the pattern and defect should be considered in repair process for the Att. PSM fabrication. Based on the experimental and simulation results, the requirements for the repair tool will be proposed.