Photoluminescence of Amorphous 2As2Te3·As2Se3Films

The photoluminescence of amorphous 2${\mathrm{As}}_{2}$${\mathrm{Te}}_{3}$\ifmmode\cdot\else\textperiodcentered\fi{}${\mathrm{As}}_{2}$${\mathrm{Se}}_{3}$ films has been measured from 2 to 150\ifmmode^\circ\else\textdegree\fi{}K with niobium-doped yttrium aluminum garnet laser excitation. The external quantum efficiency is estimated to be 20%. A typical spectrum consists of a broad band peaked at 0.61 eV with a half-width of 0.15 eV. The energy value for the luminescence peak supports the concept of a recombination gap in amorphous semiconductors.