Precise melt composition control for LEC GaAs
1987
Abstract A precise melt composition control technique for LEC GaAs has been developed by optimizing the direct synthesis process. A linear relation has been obtained between the molar ratios for the initial melt and initial charge ( Ga / As : 1.02−0.92). Temperature and pressure were programmed with an automated system to minimize arsenic loss during synthesis and to maintain high reproducibility.
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