Picosecond time‐resolved photoconductivity in amorphous silicon

An initial mobility af approximately 1 cm2/Vs has been measured in three types of amorphous silicon by picosecond photoconductivity. The photocurrents are observed to decay at rates from 4 ps to 200 ps to 200 ps depending on the method of sample preparation. The initial mobility of a‐Si:H was found to be thermally activated with an activation energy of approximately 60 meV and a prefactor of 8 cm2/Vs.