Study of the GaAs–Au and Si–SiO2 interface formation by the Kelvin method

In this paper we describe typical and simple results concerning the deposition of metal on GaAs surfaces and the first steps of Si oxidation. In the case of GaAs/metal, typical results illustrating the barrier formation, the electron affinity modification, the contribution of initial surface defects, and metal induced defects are presented and discussed, using the unified model of Spicer, Lindau et al. In the case of Si/SiO2, we focus on illustrating the method of the growth of the oxide and the resulting work function modifications.