Ga focused ion beam etching of a Si3N4/GaN substrate for submicron selective epitaxy

Authors represent utilizing UHV Ga FIB for preparing a Si3N4/GaN substrate for submicron selective-area epitaxy. In result, GaN submicron stripes were grown in the 100, 200 and 500 nm windows of a Si3N4 mask layer. SEM investigations show good crystalline perfection of the grown stripes.