Low-frequency dielectric relaxation in amorphous MoTe2 layers obtained by RF magnetron sputtering

The results of a study on dielectric relaxation in thin layers of amorphous MoTe2 using dielectric spectroscopy are presented. Dipole-relaxation polarization has been observed. The activation energy of the relaxation process was calculated to be Ea = (0.44±0.02) eV. The dispersion of the dielectric constant and the presence of a maximum of dielectric losses in the studied MoTe2 films may be due to the disordered structure of the amorphous material and the presence of chalcogen vacancies.