PECVD silicon nitride optical waveguide devices for sensing applications in the visible and <1µm near infrared wavelength region

We report several PECVD silicon nitride photonic building blocks required for the implementation of a CMOS-compatible photonic integrated circuit technology platform operating in the 850 nm and 600 nm wavelength domain. In particular, for the 850 nm wavelength region we discuss a low-loss broadband 1x2 power splitter and a loop mirror. In the 600 nm wavelength region, we present new results on an optically pumped integrated dye-doped polymer laser that couples its light directly into a silicon nitride waveguide. Moreover, we discuss design considerations for a waveguide based gas sensing concept detecting target gas specific absorption changes in a thin dye-doped polymer cladding layer.