Theoretical threshold lowering of compressively strained InGaAs/InGaAsP and GaInAsP/GaInAsP quantum-well lasers

The first theoretical evaluation is reported of the effect of biaxial compression on the quantum-well Ga/sub x/In/sub 1-x/As/Ga/sub 0.20/InAs/sub 0.45/P and Ga/sub 0.20/In/sub 0.80/As/sub y/P/sub 1-y//Ga/sub 0.20/In/sub 0.80/As/sub 0/ /sub .45/P/sub 0.55/ laser threshold current density. Reference is made to known experimental results, and a comparison carried out of the potentialities of the two types of laser.