Ferroelectric-HfO2Devices Technology and Manufacturing for Memory and Logic Applications

The discovery of ferroelectric HfO 2 crystal phase has brought a great impact on the electronic devices society. Since then, various challenges of memory and logic applications using this material are ongoing. These device technologies equipped on LSI are expected to realize low power consumption systems with large memory capacities and new processing architectures. In order to accomplish these products, it is important to manufacture “reliable and tough” ferroelectric HfO 2 films. In this paper, we discuss the status and the issues of ferroelectric HfO 2 films for electronic devices applications.