Temperature-dependent electrical conductivity in thermally carbonized porous silicon

Abstract The temperature dependence of the electrical conductivity in thermally carbonized porous silicon has been studied. The temperature dependence of conductivity is dependent on the treatment temperature and on the thickness of the porous layer. Due to the treatment, the resistance is 10 −5 times lower in samples thermally carbonized at 850 °C than in the as-anodized sample with the same thickness. The resistance–temperature characteristic of the thermally carbonized PSi was found to be well described by a thermistor equation and the temperature sensitivity was found to be good (5%/K at 25 °C).