Comparison of Hybrid 3.3kV Si-IGBT/SiC-Schottky and 3.3kV Si-IGBT/Si technologies

In this paper the electrical test results of 3.3kV Si-IGBT/4HSiC-Schottky hybrid substrates (Hybrid SiC substrates) and modules are presented. Comparison with 3.3kV Si-IGBT/Si-diode substrates (Si substrates) at 20°C (RT) and 125°C (HT) have shown that the losses in Hybrid SiC substrates/modules are miniscule as compared to Si devices. Finally the benefits of this technology are shown by building some hybrid 3.3kV, 1100 A modules.