THz imaging with low-cost 130 nm CMOS transistors
2010
We report on active imaging with CMOS transistors at 300 GHz and 1.05 THz. Two basic focal plane arrays consisting
of nMOS transistors and wide-band bow-tie antennas have been implemented in a low-cost 130 nm CMOS technology.
Raster scan imaging of objects concealed in a paper envelope has been achieved at 300 GHz with a commercial radiation
source. The images clearly reveal the concealed objects with a dynamic range of 35 dB and a resolution of 3 mm. At
1.05 THz, the pixels achieve a responsivity of 50 V/W and a noise equivalent power of 900 pW/Hz 0.5 .
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