Method of manufacturing a Schottky diode on a diamond substrate

The invention relates to a method of manufacturing a Schottky diode, comprising the following steps: a) oxygenate the surface of a semiconductor layer (105) monocrystalline diamond, so as to replace hydrogen terminated surface of the semiconductor layer ( 105) by oxygen-terminated surface; and b) forming by physical vapor deposition, a first conductive layer of zirconium or indium tin oxide on the surface of the semiconductor layer (105).