Large nitrogen composition of GaNSb grown by RF‐MBE

GaNSb films were grown using molecular beam epitaxy with a nitrogen radio frequency plasma source. GaNSb films with up to 1% nitrogen composition were obtained by changing the growth temperature. The GaNSb absorption edge which is longer than that of GaSb, was confirmed at about 0.53 eV using a Fourier transform infrared spectrometer in the sample grown at 450°C.