Silicon Telescope Detectors

The results of research and development of special silicon detectors with a large active area (>8 cm2) for multilayer telescope spectrometers performed at the Laboratory of Nuclear Problems of the Joint Institute for Nuclear Research are reviewed. The results of studying their characteristics are presented. A method for manufacturing surface-barrier detectors (identifiers) operating in the total-depletion mode at a bias voltage two to three times higher than the depletion voltage is described. It is shown that lithium-drift detectors with thin (10–20 µm) entrance windows can be created on the side of the diffusion layer. The methods developed for manufacturing such detectors allowed “dead” regions to be minimized and the stable operation and high spectrometric parameters to be maintained during prolonged exposures to charged-particle beams.