Quasi-2D Surface-Potential Solution to Three-Terminal Undoped Symmetric Double-Gate Schottky-Barrier MOSFETs

This paper presents an analytical quasi-2D surface potential solution to Schottky-Barrier (SB) MOSFETs, with one unified terminal-bias and device-parameter dependent characteristic length, which takes the screening of the gate field by free carriers into account. The proposed model is also valid for arbitrary terminal bias with respective to any reference voltage and applicable to asymmetric SB-DG devices. Terminal current can be calculated based on the obtained energy band model, which can provide insights into the modeling and design of future advanced MOSFETs with Schottky-barrier source/drain contacts.