Light emitting diode and method of manufacturing the diode

Light-emitting diode is provided on the semiconductor laminated structure provided the isolated pattern, the insulating pattern is provided so as to penetrate through the semiconductor laminated structure, the semiconductor layered structure including the n-type compound semiconductor layer, an active layer and a p-type compound semiconductor layer and down, p type compound is provided on the first transparent electrode, the first transparent electrode contacting the semiconductor layer, is provided in the lower part of the first electrically connected to the transparent electrode p-type electrode, an insulating pattern is provided with the semiconductor stacked structure, the insulating pattern the contact with the n-type compound semiconductor layer is split by the second transparent electrode and the transparent electrode is provided on the lower one, the first comprising an n-type electrode electrically connected to the second transparent electrode. Since replacing a defective portion of the semiconductor stacked structure with an insulating pattern can improve the efficiency of the light emitting diode.