Multi-probe Two-Dimensional MappingofOff-State Degradation inDeNMOS Transistors: HowandWhyInterface DamagePredicts GateDielectric Breakdown

Through acombination ofmeasurements techniques, we showthat thegeneration ofbothinterface andbulktraps during off-state stress indrain extended NMOS transistors aredriven bythesamephysical mechanism andassuch lX havesimilar timeandvoltage dependencies. Wealso show thatthepeakinterface damagelocation (obtained from