Fabricating Nanoscale Features Using the 2-Step NERIME TSI Nanolithography Process

The 2-step negative resist image by dry etching (2-step NERIME) focused ion beam (FIB) top surface imaging (TSI) process is a novel nanolithography technique for creating nanometer scale resist features using conventional DNQ/novolak resists. The 2-step NERIME process combines the advantages of FIB lithography and TSI processing, delivering high aspect ratio nanometer-scale resist CDs. Previous work has reported 90nm resist critical dimensions (CDs) on topography using the 2-Step NERIME process. We present 90nm resist CDs over substrate topography, and 80nm etched features masked using the 2-step NERIME process. The 2-step NERIME process uses equipment sets and materials commonly found in microelectronic device fabrication (FIB and O2 plasma etch tools, DNQ/novolak resists), and we demonstrate its potential as a low-cost and convenient nanolithography option for proof-of-concept nanoscale processing.