Impact oflayout andprocesson RFandanalog performances of3Ddamascene MIM capacitors

RF and analogdesigns require high performances MIM capacitors. In ordertocontinue the downscaling ofMIM devices, weproposed andintegrated a 3D damascene MIM capacitor usingSi3N4dielectric inthe copperback-end ofa0.13!tm BICMOS technology. Layout andprocess havebeenrecently optimized toreachexcellent reliability performances whilekeepingverygoodRF performances. C1._._. *__1C ~~~~~~~~~~~~~~~~~~~~~Metal 6 ~~~~~~~~~~~~~. t.....