Amorphous p-Type CuNiSnO Thin-Film Transistors Processed at Low Temperatures

In this article, we have developed an amorphous CuNiSnO (a-CNTO), which is a p-type amorphous oxide semiconductor (AOS). The a-CNTO thin films were deposited by the pulsed laser deposition method, having high amorphous quality with a rather smooth surface. The a-CNTO films grown at 100 °C exhibited the smoothest surface (root-mean-square roughness of 0.25 nm), highest visible transparency (~85%), and most favorable p-type conductivity (hole concentration of ~1015 cm−3), which are very suitable for electronic device fabrication. Thus, the obtained p-type a-CNTO thin-film transistors (TFTs) have an ON-to- OFF current ratio of $\sim 1.2\times 10^{{5}}$ , the threshold voltage of −2.3 V, the field-effect mobility of 1.37 cm2/Vs, and subthreshold swing of 0.70 V/decade. As a new kind of p-type AOS, the achievement of the p-type a-CNTO TFTs and the low-temperature processes may open the door for practical applications in transparent and flexible electronics.