A low-cost, forming-free WO x ReRAM using novel self-aligned photo-induced oxidation

A novel CMOS compatible photo oxidation (PO) technology is proposed in this paper which, by only using standard DUV photo lithography process, demonstrates a strong oxidation capability to form CMOS compatible WO x . The oxidation occurs through catalytic chemical reaction during the post exposure baking (PEB) process. Based on this unique PO process, a high performance forming free 1T-1R WO x ReRAM is demonstrated. Furthermore, this PO WO x ReRAM can withstand high temperature baking (@ 250°C) for 30 min thus is suitable for embedded systems that require pre-coding, and automotive and other industrial applications.