InGaN Selfassembled Quantum Dots Investigated By X‐Ray Diffraction‐Anomalous‐Fine Structure Technique

Local chemical composition of InGaN quantum dots grown by molecular‐beam epitaxy on GaN virtual substrates was investigated by x‐ray diffraction anomalous fine‐structure method. Using this approach, we found that the In content increases from 20% at the dot base to 40–50% at the top. From the detailed numerical analysis of the data we were able to reconstruct the local neighborhood of Ga atoms in different positions in the dots, as well as the local elastic relaxation state.