X-Γ scattering in GaAs/AlAs short-period superlattices

Abstract The cw and time-resolved photoluminescence spectra of a [0 0 1]-(GaAs) 10 /(AlAs) 10 short-period superlattice are studied under [0 0 1] uniaxial stress. The superlattice is of the type-II and the lowest excited state is the “X z ” exciton. The stress dependence of the exciton decay time is found to be explained in terms of a thermally activated transition of excitons to the l'state. Results for the stress-induced change in the X-Γ mixing are also presented.