Room-temperature antiferromagnetic memory resistor.

Xavi Marti,Ignasi Fina,Carlos Frontera,Jian Liu,Peter Wadley,Qing He,R. J. Paull,James D. Clarkson,J. Kudrnovsky,Ilja Turek,Jan KuneŠ,Di Yi,Jiun-Haw Chu,Christopher T. Nelson,Long You,Elke Arenholz,Sayeef Salahuddin,Josep Fontcuberta,Tomas Jungwirth,Ramamoorthy Ramesh

Room-temperature antiferromagnetic memory resistor.

2014

Magnetic memory devices are typically based on ferromagnetic materials. Now, a memory resistor based on the antiferromagnetic alloy FeRh is demonstrated at room temperature.

Keywords:

Materials science
Condensed matter physics
Alloy
Resistor
Antiferromagnetism
Ferromagnetism
magnetic memory
information storage

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