Defect states and impurity states in amorphous As2Te3

Abstract Amorphous films of (As 2 Te 3 ) 1−x M x where M = Mn, Cu and Ge were deposited at 77K. Hopping conductivity is observed in all the as-deposited films. Similarly to undoped As 2 Te 3 , the localized paramagnetic defect states are also established in the as-deposited samples by an ESR signal with a 16G linewidth at g = 2. After annealing the defect states disappear, but in the case of Mn the hopping conductivity persists as a result of the impurity states revealed by wide ESR lines at g = 2 and g = 4.3.