Growth of Epitaxial-Like (Sr0.5Ba0.5)Nb2O6 Ferroelectric Films

Epitaxial-like (Sr0.5Ba0.5)Nb2O6 (SBN) films were successfully grown on (100) silicon substrates, using [002] CeO2 as the buffer layer and [00l] YBa2Cu3O7-x (YBCO) as the base electrode. The θ-2θ scan and -scan X-ray diffraction suggest that [210] SBN|| [100] YBCO|| [110]CeO2|| [110] Si. The ferroelectric hysteresis curves measured by the modified Sawyer-Tower technique show that the epitaxial-like SBN/YBCO/CeO2/Si films possess substantially better ferroelectricity than the polycrystalline SBN/Pt(Ti)/Si films. The remanent polarization (P r ) and coercive field (E c ) are, respectively, P r=27.2 µ C/cm2 and E c=24.8 kV/cm.