Chemical H-Insertion into Gamma-Manganese Dioxides at Low Temperature

Gamma Manganese Dioxides (g-MnOx) are non-stoichiometric, stable, layered materials with interstitial space to accommodate inserted ions. g-MnOx have been used as battery materials for decades. This book presents an easy to read comprehensive body of research work into the production of a series of H-inserted g-MnOx (with 1.5electrode potential measurements. The characterisation reveled many interesting structural changes in the materials caused by H-insertion. The FTIR study at low temperature presents, for the first time, tangible evidence of mobile H in one of the most defected g-MnOx. This can open avenues of new applications of MnOx as well as other layered materials of similar structures like conducting oxides.