Photoluminescence of ZnSe-ZnTe strained layer superlattices

Abstract ZnSe-ZnTe strained layer superlattices of 500 periods have been grown on GaAs (001) surfaces by molecular beam epitaxy (MBE) without any buffer layer. The thickness ratio of ZnSe to ZnTe in one period is changed variously, keeping the thickness of one period to be 20 A constantly. The photoluminescence intensity of blue emission of a sample with thin ZnTe layers is 100 times stronger compared with I 2 (emission line due to the exciton-donor complexes) of a simple MBE-ZnSe at 9 K. The temperature dependence of this intensity predicts that the emission structure is due to the isoelectronic traps related to Te.