Fabry-Perot cavity oscillations of an AlxGa 1− xAs photoluminescence spectrum

J. L. Bradshaw,Robert P. Devaty,W. J. Choyke,R.L. Messham

Fabry-Perot cavity oscillations of an AlxGa 1− xAs photoluminescence spectrum

1990

J. L. Bradshaw
Robert P. Devaty
W. J. Choyke
R.L. Messham

When the GaAs substrate of a 5-μm AlxGa1−x film is removed by chemical etching, oscillations in the film-layer-formed Fabry-Perot cavity are observed in the low temperature photoluminescence spectrum.

Keywords:

Chemical vapor deposition
Thin film
Interference (wave propagation)
Photoluminescence
Fabry–Pérot interferometer
Isotropic etching
Refractive index
Dispersion (optics)
Optics
Physics
Gallium arsenide
Optoelectronics
Semiconductor

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