Efficient generation of nanoscale arrays of nitrogen-vacancy centers with long coherence time in diamond

Utilizing PMMA mask, nanoscale arrays of nitrogen-vacancy (NV) centers in diamond have been fabricated by ion beam implantation (IBM). Long coherence time of the spin of NV centers, comparable with that of the native NV centers in CVD grown diamond, has been achieved by high-temperature annealing. With dynamic decoupling technology, coherence time was extended to 1.4 millisecond, which enable an ac magnetic field detection with a sensitivity of \(80\,nT\cdot Hz^{-1/2}\).