Electroplating (ECP) entry related defect improvement study
2015
With the logic device size shrinking to 28nm and beyond, ultra- low k has been introduced to Cu interconnect, which makes ECP Cu gap-fill very challenging. This paper studied ECP entry related defect with special map. Entry related parameter: entry wave form, entry dynamic mode, and additive concentration have been studied to improve this special pattern defect. Suppressor concentration and dynamic mode have obvious impact on this special pattern. A bubble related model has been proposed to explain defect formation mechanism.
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