Effect of temperature on the threshold current and wavelength of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) diode lasers

Results will be presented on the variation of threshold current and emission wavelength with temperature of MQW InGaAs/GaAs circular-grating, surface-emitting, distributed Bragg reflector (CG-SE-DBR) lasers, in the range 10 - 90 degree(s)C. The structures were grown by one-step MBE and the circular gratings were defined by electron-beam lithography. Measurements were made pulsed and CW. The characteristic temperature ranged between 18 - 48 K. A wavelength variation with temperature of around 0.1 nm/ degree(s)C was obtained. The results are compared with those of linear, GaAs-based DBR lasers.