Investigation of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes with AlInGaN/AlInGaN Superlattice Electron Blocking Layer

The properties of AlGaN-based deep-ultraviolet light-emitting diodes with AlInGaN/AlInGaN superlattices (SLs) electron blocking layer (EBL) were studied numerically. When the common structure of AlGaN EBL is replaced by AlInGaN/AlInGaN SLs EBL, the simulation results show a higher light output power and internal quantum efficiency, which is attributed to higher barrier-suppressing electron leakage and reduced barrier for hole injection due to the alleviated strain force and lattice match. The results also demonstrate that the efficiency drop is slightly decreased from 20.9% to 15.8% when the new structure is used.