A method of manufacturing a semiconductor structure with grain elements for a capacitor of a memory cell

A method for producing a grain Halbleiterstrukur with elements for a capacitor of a memory cell, which has the following running in order steps of: a) providing a substrate (101) of silicon; b) patterning the substrate (101) by a grave shaped recess (102) in the substrate (101) is etched; c) forming a barrier layer (103) in the grave shaped recess (102) of the substrate (101) made of a silicon nitride material and / or an alumina material such that the barrier layer (103) (in an upper area of ​​the grave shaped depression 102 ) forming the collar portion (302) covering an inner surface (105) of the grave shaped recess (102) and (in a lower portion of grave-shaped recess 102) forming the first electrode portion (301) leaving free the inner surface (105) of the grave shaped recess (102); d) forming a layer of silicon dioxide in the electrode region (301); e) depositing an amorphous silicon layer (106) in a first step, a furnace process at a first temperature and a first pressure such that the amorphous silicon layer ...