Effect of High-Fluence Ion Irradiation on the Structure and Electrical Properties of Polycrystalline Diamond

The results of experimental investigation of the surface layer of polycrystalline diamond modified by high-fluence (≥1018 cm–2) 30-keV Ar+ ion irradiation are presented. The reflection high-energy electron diffraction (RHEED) patterns, Raman spectra, and temperature dependences of the electrical resistance are analyzed. It is found that depending on the irradiation conditions and temperature treatment of diamond a modified layer is formed with either a disorderd structure and semiconductor conductivity or the graphite structure and metallic conductivity.