language-icon Old Web
English
Sign In
Acemap > Paper > Forming-free resistive switching in ferroelectric Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 film for RRAM application

Forming-free resistive switching in ferroelectric Bi 0.97 Y 0.03 Fe 0.95 Sc 0.05 O 3 film for RRAM application

2021 
Keywords:
    • Correction
    • Source
    • Cite
    • Save
    • Machine Reading By IdeaReader
    29
    References
    0
    Citations
    NaN
    KQI
    []
    logo
    • CCF Conference Analysis
    • Map Galaxy
    • What's New
    © Copyright 2015-2020 Acemap, Inc. Shanghai Jiao Tong University.