Spectroscopic investigation of (NH4)2S treated GaSeTe for radiation detector applications

Abstract The surface of the layered III–VI chalcogenide semiconductor GaSeTe was treated with (NH 4 ) 2 S at 60 °C to modify the surface chemistry and determine the effect on transport properties. X-ray photoelectron spectroscopy and room temperature photoluminescence were used to examine the surface reactions and effect on surface defect states of the (NH 4 ) 2 S treatment. Metal overlayers were deposited on the (NH 4 ) 2 S treated surfaces and the I–V characteristics were measured. The measurements were correlated to understand the effect of (NH 4 ) 2 S modification of the interfacial electronic structure with the goal of optimizing the metal/GaSeTe interface for radiation detector devices.