Wafer-fused p-i-n InGaAs/Si photodiode with photogain

Using high temperature fusion of InGaAs/InP on Si, we demonstrated an InGaAs/Si p-i-n photodiode with a photomultiplication gain of 11 at relatively low bias of −15 V. The photodiode exhibited a dark current of 30 nA at −5 V, and a responsivity of 0.3 A/W at 1.32 μm wavelength without antireflection coating. The measured device behavior were consistent with that predicted by a model of charged interface states resulting from the fusion.