Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices

Abstract The resistive switching characteristics of MnO and CeO 2 layers with a large resistance ratio (> 10 5 ) were demonstrated. The Ag/MnO/CeO 2 /Pt devices with heterostructures were fabricated. The bipolar resistive switching behaviors were caused by the formation and disruption of conducting filaments in the switching layers. In CeO 2 layer, the formation and rupture of conducting filaments was attributed to the reduction-oxidation reaction of CeO 2 and CeO 2 − x . The conduction mechanisms of ohmic conduction and Schottky emission had been investigated for resistance switching mechanism.