Effect of indium on the field effect studies of thin SnTe films

Field effect studies were made on In‐rich SnTe films using metal‐insulator‐semiconductor (silver‐mica In‐Sn e) structures. It has been observed that when a negative gate field (∼1.5×105V/cm) was applied to the films at 77 K, a permanent decrease in the value of the Hall coefficient RH takes place, whereas no such effect has been noticed in metal‐insulator‐semiconductor structures on undoped SnTe films.